The optimized electrochemical deposition of bismuth-bismuth telluride layered crystal structures

Underpotential deposition, i.e. the cathodic deposition above reversible potential E(Men+/Me), produces an atomic layer of a metal on semiconductor electrode, such as e.g. bismuth telluride. This phenomenon allows electrodeposition superlattices formed building blocks layered structure joined by biatomic interlayer. work outlines optimized pulse controlled (Bi2)m(Bi2Te3)n films produced under mentioned technique. The influence morphology electrodeposited key-parameters applied frequency, duty cycle, routine sodium dodecyl sulfate introduction in electrolyte is discussed. procedure comprises short (about 10 s) pre-treatment at high overpotential reaction, subsequent periodic switching for 120 min between potentials and refinement 0.1 Hz 5% cycle with addition surfactant 60 after start electrodeposition.